UMG8N Datasheet. Specs and Replacement
Type Designator: UMG8N 📄📄
SMD Transistor Code: G8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
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UMG8N datasheet
Transistors Emitter common (dual digital transistors) UMG8N / FMG8A FFeatures FExternal dimensions (Units mm) 1) Two DTC143T chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. FAbsolute maximum ratings (Ta = 25_C) ... See More ⇒
umg8n fmg8a g2 sot23-5 sot353.pdf ![]()
Transistors Emitter common (dual digital transistors) UMG8N / FMG8A FFeatures FExternal dimensions (Units mm) 1) Two DTC143T chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. FAbsolute maximum ratings (Ta = 25_C) ... See More ⇒
EMG8 / UMG8N / FMG8A Transistors Emitter common (dual digital transistors) EMG8 / UMG8N / FMG8A Features External dimensions (Units mm) 1) Two DTC143Z chips in a EMT or UMT or SMT EMG8 package. 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Each lead has same dimensions Epitaxial planar type ROHM EMT5 NPN silicon transistor Abbrevia... See More ⇒
Detailed specifications: PDTA123EK, PDTA123ES, UMG1N, UMG2N, UMG3N, UMG4N, UMG5N, UMG6N, NJW0281G, UMG9N, UMH10N, UMH11N, UMH1N, UMH2N, UMH3N, UMH4N, UMH5N
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