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UMG9N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UMG9N
   Código: G9
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC88A SOT353
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UMG9N Datasheet (PDF)

 ..1. Size:68K  rohm
 umg9n fmg9a g9 sot23-5 sot353.pdf pdf_icon

UMG9N

TransistorsEmitter common (dual digital transistors)UMG9N / FMG9AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E in a UMT or SMTpackage.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)(96-4

 ..2. Size:67K  rohm
 emg9 umg9n fmg9a umg9n.pdf pdf_icon

UMG9N

EMG9 / UMG9N / FMG9A Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A Features External dimensions (Unit : mm) 1) Two DTC114E in a EMT or UMT or SMT package. EMG92) Mounting cost and area can be cut in half. (4) (3)(2)(5) (1)1.21.6 Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensionsROHM : EMT5(Built

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SC2273 | 2SB443A | NKT108 | KRC663U | 2SC765 | 2N5862 | DTC123JEB

 

 
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