UMG9N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMG9N
SMD Transistor Code: G9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC88A
SOT353
UMG9N Transistor Equivalent Substitute - Cross-Reference Search
UMG9N Datasheet (PDF)
umg9n fmg9a g9 sot23-5 sot353.pdf
TransistorsEmitter common (dual digital transistors)UMG9N / FMG9AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E in a UMT or SMTpackage.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)(96-4
emg9 umg9n fmg9a umg9n.pdf
EMG9 / UMG9N / FMG9A Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A Features External dimensions (Unit : mm) 1) Two DTC114E in a EMT or UMT or SMT package. EMG92) Mounting cost and area can be cut in half. (4) (3)(2)(5) (1)1.21.6 Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensionsROHM : EMT5(Built
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
