UMG9N Datasheet. Specs and Replacement

Type Designator: UMG9N  📄📄 

SMD Transistor Code: G9

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC88A SOT353

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UMG9N datasheet

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 umg9n fmg9a g9 sot23-5 sot353.pdf pdf_icon

UMG9N

Transistors Emitter common (dual digital transistors) UMG9N / FMG9A FFeatures FExternal dimensions (Units mm) 1) Two DTC114E in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. FAbsolute maximum ratings (Ta = 25_C) (96-4... See More ⇒

 ..2. Size:67K  rohm

 emg9 umg9n fmg9a umg9n.pdf pdf_icon

UMG9N

EMG9 / UMG9N / FMG9A Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A Features External dimensions (Unit mm) 1) Two DTC114E in a EMT or UMT or SMT package. EMG9 2) Mounting cost and area can be cut in half. (4) (3) (2) (5) (1) 1.2 1.6 Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensions ROHM EMT5 (Built... See More ⇒

Detailed specifications: PDTA123ES, UMG1N, UMG2N, UMG3N, UMG4N, UMG5N, UMG6N, UMG8N, D965, UMH10N, UMH11N, UMH1N, UMH2N, UMH3N, UMH4N, UMH5N, UMH6N

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