UN4211 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UN4211
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: TO92S
UN4211 Datasheet (PDF)
un4210q un4210r un4210s un4211 un4212 un4213 un4214 un4215q un4215r un4215s un4216q un4216r un4216s un4217q un4218 un4219 un421d un421e un421f un421k un421l.pdf

Transistors with built-in ResistorUNR4211/4212/4213/4214/4215/4216/4217/4218/4219/4210/421D/421E/421F/421K/421L(UN4211/4212/4213/4214/4215/4216/4217/4218/4219/4210/421D/421E/421F/421K/421L)Unit: mm4.00.2Silicon NPN epitaxial planer transistorFor digital circuitsFeatures Costs can be reduced through downsizing of the equipment andreduction of the number of parts.mark
un4213.pdf

UN4213(3RC4213) NPN /SILICON NPN DIGITAL TRANSISTOR : Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. : Features: With built-in bias resistors, simplify circuit design, reduce a q
Otros transistores... UN4122 , UN4123 , UN4124 , UN412X , UN412Y , UN4210Q , UN4210R , UN4210S , 2222A , UN4212 , UN4213 , UN4214 , UN4215Q , UN4215R , UN4215S , UN4216Q , UN4216R .
History: EMB53 | 2SB442



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