UN4211 Datasheet and Replacement
Type Designator: UN4211
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO92S
UN4211 Substitution
UN4211 Datasheet (PDF)
un4210q un4210r un4210s un4211 un4212 un4213 un4214 un4215q un4215r un4215s un4216q un4216r un4216s un4217q un4218 un4219 un421d un421e un421f un421k un421l.pdf

Transistors with built-in ResistorUNR4211/4212/4213/4214/4215/4216/4217/4218/4219/4210/421D/421E/421F/421K/421L(UN4211/4212/4213/4214/4215/4216/4217/4218/4219/4210/421D/421E/421F/421K/421L)Unit: mm4.00.2Silicon NPN epitaxial planer transistorFor digital circuitsFeatures Costs can be reduced through downsizing of the equipment andreduction of the number of parts.mark
un4213.pdf

UN4213(3RC4213) NPN /SILICON NPN DIGITAL TRANSISTOR : Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. : Features: With built-in bias resistors, simplify circuit design, reduce a q
Datasheet: UN4122 , UN4123 , UN4124 , UN412X , UN412Y , UN4210Q , UN4210R , UN4210S , 2222A , UN4212 , UN4213 , UN4214 , UN4215Q , UN4215R , UN4215S , UN4216Q , UN4216R .
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