ZT22 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZT22
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 70 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 18
Encapsulados: TO5
Búsqueda de reemplazo de ZT22
- Selecciónⓘ de transistores por parámetros
ZT22 datasheet
0.1. Size:136K motorola
pzt2222a.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZT2222AT1/D NPN Silicon Planar PZT2222AT1 Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE PNP Complem
0.2. Size:51K philips
pzt2222a 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 Jun 02 Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter
0.3. Size:124K philips
pzt2222a.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet 1999 Apr 14 Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Swi
0.4. Size:83K st
stzt2222.pdf
STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER 3 OUTPUT STAGE 2 PNP COMPLEMENTS ARE STZT2907 AND 1 STZT2907A RESPECTIVELY SOT-223 INTERNAL SCHEMATIC
0.5. Size:51K st
stzt2222a.pdf
STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE PNP COMPLEMENTARY TYPE IS 2 1 STZT2907A APPLICATIONS SOT-223 WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SAT
0.6. Size:174K fairchild semi
pn2222a mmbt2222a pzt2222a.pdf
August 2010 PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value U
0.7. Size:335K nxp
pzt2222a.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.8. Size:126K siemens
pzt2222.pdf
NPN Silicon Switching Transistors PZT 2222 PZT 2222 A High DC current gain 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types PZT 2907 (PNP) PZT 2907 A (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 PZT 2222 ZT 2222 Q62702-Z2026 B C E C SOT-223 PZT 2222 A ZT 2222 A Q62702-Z2027 Maximum Ratings Parameter Symbol Valu
0.9. Size:236K diodes
dzt2222a.pdf
DZT2222A NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DZT2907A) 3 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 4 SOT-223 Mechanical Data COLLECTOR
0.10. Size:129K onsemi
pzt2222at1-d.pdf
PZT2222AT1 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT--223 package which is designed for medium power surface mount http //onsemi.com applications. Features SOT--223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT--223 Package Can be
0.11. Size:129K onsemi
pzt2222a.pdf
PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount www.onsemi.com applications. Features SOT-223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT-223 Package Can be Soldered
0.12. Size:284K utc
pzt2222a.pdf
UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Ree
0.13. Size:176K secos
pzt2222a.pdf
PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-223 C 1. BASE 2. COLLECTOR FEATURES 3. EMITTER E C Power dissipation B P CM 1 W Tamb=25 Collector current I CM 0.6 A Collector-base voltage V(BR)CBO 75 V Operating and stora
0.14. Size:1531K jiangsu
pzt2222a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR (NPN) SOT-223 FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A) 1. BASE MARKING 2. COLLECTOR 3. EMITTER Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwis
0.15. Size:1032K lge
pzt2222a.pdf
PZT2222A SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and
0.16. Size:189K wietron
pzt2222a.pdf
PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE BASE 2.COLLECTOR 1 1 3.EMITTER 2 4.COLLECTOR 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO Vdc 75 Emitter-Base Voltage VEBO Vdc 6.0 Collector Current (DC) IC(DC) Adc 0.6 1.5 Total Device D
0.17. Size:163K cystek
pzt2222al3.pdf
Spec. No. C825L3 Issued Date 2006.04.25 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features High current, max. 600mA Low voltage, max. 40V Pb-free package Applications Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C B Base B C Collector E Emitter
0.18. Size:499K kexin
kzt2222a.pdf
SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Epitaxial planar die construction Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC
0.19. Size:911K kexin
fzt2222a.pdf
SMD Type Transistors NPN Transistors FZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V Complementary to FZT2907A 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base C 2.Collector 3.Emitter 4.60 (typ) B 4.Collector E Absolute Maximum Ratings Ta
0.20. Size:691K kexin
pzt2222a.pdf
SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Epitaxial planar die construction Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC
0.21. Size:102K diotec
pzt2222-a.pdf
PZT2222 / PZT2222A PZT2222 / PZT2222A Suface Mount Si-Epitaxial Planar Switching Transistors NPN NPN Si-Epitaxie-Planar-Schalttransistoren f r die Oberfl chenmontage Version 2006-05-09 Power dissipation 1.3 W 6.5 0.2 Verlustleistung 3 0.1 1.65 Plastic case SOT-223 4 Kunststoffgeh use Type Weight approx. 0.04 g Code Gewicht ca. 1 2 3 0.7 Plastic material has UL classifica
Otros transistores... ZT203
, ZT203P
, ZT204
, ZT204P
, ZT21
, ZT210
, ZT2102
, ZT211
, C5198
, ZT2205
, ZT2206
, ZT2270
, ZT23
, ZT2368
, ZT2369
, ZT2369A
, ZT24
.
