All Transistors. ZT22 Datasheet

 

ZT22 Datasheet, Equivalent, Cross Reference Search

Type Designator: ZT22

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 18

Noise Figure, dB: -

Package: TO5

ZT22 Transistor Equivalent Substitute - Cross-Reference Search

 

ZT22 Datasheet (PDF)

1.1. pzt2222-a.pdf Size:102K _update

ZT22
ZT22

PZT2222 / PZT2222A PZT2222 / PZT2222A Suface Mount Si-Epitaxial Planar Switching Transistors NPN NPN Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage Version 2006-05-09 Power dissipation 1.3 W 6.5±0.2 Verlustleistung 3±0.1 1.65 Plastic case SOT-223 4 Kunststoffgehäuse Type Weight approx. 0.04 g Code Gewicht ca. 1 2 3 0.7 Plastic material has UL classifica

1.2. kzt2222a.pdf Size:499K _update

ZT22
ZT22

SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit:mm SOT-223 6.50±0.2 3.00±0.1 ■ Features 4 ● Epitaxial planar die construction ● Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70±0.1 3.Emitter 4.60 (typ) 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VC

 1.3. pzt2222a.pdf Size:136K _motorola

ZT22
ZT22

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZT2222AT1/D NPN Silicon Planar PZT2222AT1 Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE PNP Complement i

1.4. pzt2222a 3.pdf Size:51K _philips2

ZT22
ZT22

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 Jun 02 Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Switc

 1.5. pzt2222a.pdf Size:124K _philips2

ZT22
ZT22

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet 1999 Apr 14 Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Switching an

1.6. stzt2222a.pdf Size:51K _st2

ZT22
ZT22

STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE PNP COMPLEMENTARY TYPE IS 2 1 STZT2907A APPLICATIONS SOT-223 WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURAT

1.7. stzt2222.pdf Size:83K _st2

ZT22
ZT22

STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER 3 OUTPUT STAGE 2 PNP COMPLEMENTS ARE STZT2907 AND 1 STZT2907A RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DI

1.8. pn2222a mmbt2222a pzt2222a.pdf Size:174K _fairchild_semi

ZT22

1.9. pzt2222.pdf Size:126K _siemens

ZT22
ZT22

NPN Silicon Switching Transistors PZT 2222 PZT 2222 A High DC current gain: 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types: PZT 2907 (PNP) PZT 2907 A (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 PZT 2222 ZT 2222 Q62702-Z2026 B C E C SOT-223 PZT 2222 A ZT 2222 A Q62702-Z2027 Maximum Ratings Parameter Symbol Values

1.10. dzt2222a.pdf Size:236K _diodes

ZT22
ZT22

DZT2222A NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DZT2907A) 3 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 4 SOT-223 Mechanical Data COLLECTOR Case: SOT-223

1.11. pzt2222at1-d.pdf Size:129K _onsemi

ZT22
ZT22

PZT2222AT1 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT--223 package which is designed for medium power surface mount http://onsemi.com applications. Features SOT--223 PACKAGE ? PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR ? The SOT--223 Package Can be Soldere

1.12. pzt2222a.pdf Size:284K _utc

ZT22
ZT22

UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Reel

1.13. pzt2222a.pdf Size:176K _secos

ZT22
ZT22

PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-223 C 1. BASE 2. COLLECTOR FEATURES 3. EMITTER E C Power dissipation B P CM : 1 W Tamb=25 Collector current I CM : 0.6 A Collector-base voltage V(BR)CBO : 75 V Operating and storage

1.14. pzt2222a.pdf Size:1032K _lge

ZT22
ZT22

PZT2222A SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mill

1.15. pzt2222a.pdf Size:189K _wietron

ZT22
ZT22

PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE BASE 2.COLLECTOR 1 1 3.EMITTER 2 4.COLLECTOR 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO Vdc 75 Emitter-Base Voltage VEBO Vdc 6.0 Collector Current (DC) IC(DC) Adc 0.6 1.5 Total Device Diss

1.16. pzt2222al3.pdf Size:163K _cystek

ZT22
ZT22

Spec. No. : C825L3 Issued Date : 2006.04.25 CYStech Electronics Corp. Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features • High current, max. 600mA • Low voltage, max. 40V • Pb-free package Applications • Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C B:Base B C:Collector E:Emitter

1.17. fzt2222a.pdf Size:911K _kexin

ZT22
ZT22

SMD Type Transistors NPN Transistors FZT2222A (KZT2222A) Unit:mm SOT-223 6.50±0.2 3.00±0.1 4 ■ Features ● Collector Current Capability IC=0.6A ● Collector Emitter Voltage VCEO=40V ● Complementary to FZT2907A 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base C 2.Collector 3.Emitter 4.60 (typ) B 4.Collector E ■ Absolute Maximum Ratings Ta

1.18. pzt2222a.pdf Size:691K _kexin

ZT22
ZT22

SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit:mm SOT-223 6.50±0.2 3.00±0.1 ■ Features 4 ● Epitaxial planar die construction ● Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70±0.1 3.Emitter 4.60 (typ) 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VC

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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