Биполярный транзистор ZT22 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: ZT22
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 70 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 18
Корпус транзистора: TO5
ZT22 Datasheet (PDF)
pzt2222a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZT2222AT1/DNPN Silicon PlanarPZT2222AT1Epitaxial TransistorMotorola Preferred DeviceThis NPN Silicon Epitaxial transistor is designed for use in linear and switchingapplications. The device is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGE PNP Complem
pzt2222a 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZT2222ANPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 Jun 02Philips Semiconductors Product specificationNPN switching transistor PZT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2, 4 collectorAPPLICATIONS3 emitter
pzt2222a.pdf
DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZT2222ANPN switching transistorProduct data sheet 1999 Apr 14Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheetNPN switching transistor PZT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2, 4 collectorAPPLICATIONS3 emitter Swi
stzt2222.pdf
STZT2222STZT2222AMEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 PNP COMPLEMENTS ARE STZT2907 AND1STZT2907A RESPECTIVELYSOT-223INTERNAL SCHEMATIC
stzt2222a.pdf
STZT2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTZT2222A N22A SILICON EPITAXIAL PLANAR NPNTRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING3 THE PNP COMPLEMENTARY TYPE IS 21STZT2907AAPPLICATIONS SOT-223 WELL SUITABLE FOR SMD MOTHERBOARD ASSEMBLY SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SAT
pn2222a mmbt2222a pzt2222a.pdf
August 2010PN2222A / MMBT2222A / PZT2222ANPN General Purpose AmplifierFeatures This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value U
pzt2222a.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pzt2222.pdf
NPN Silicon Switching Transistors PZT 2222PZT 2222 A High DC current gain: 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types: PZT 2907 (PNP)PZT 2907 A (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4PZT 2222 ZT 2222 Q62702-Z2026 B C E C SOT-223PZT 2222 A ZT 2222 A Q62702-Z2027Maximum RatingsParameter Symbol Valu
dzt2222a.pdf
DZT2222A NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DZT2907A) 32 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 4 SOT-223 Mechanical Data COLLECTOR
pzt2222at1-d.pdf
PZT2222AT1NPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT--223package which is designed for medium power surface mounthttp://onsemi.comapplications.Features SOT--223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT--223 Package Can be
pzt2222a.pdf
PZT2222ANPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT-223package which is designed for medium power surface mountwww.onsemi.comapplications.Features SOT-223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT-223 Package Can be Soldered
pzt2222a.pdf
UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Ree
pzt2222a.pdf
PZT2222ANPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-223 C 1. BASE 2. COLLECTORFEATURES 3. EMITTERE CPower dissipationB PCM : 1 W Tamb=25 Collector currentICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V Operating and stora
pzt2222a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR (NPN) SOT-223 FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A) 1. BASE MARKING: 2. COLLECTOR 3. EMITTERSolid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwis
pzt2222a.pdf
PZT2222A SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and
pzt2222a.pdf
PZT2222ANPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 4 SOT-22341. BASE BASE2.COLLECTOR1 13.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBOVdc75Emitter-Base Voltage VEBOVdc6.0Collector Current (DC) IC(DC)Adc0.61.5Total Device D
pzt2222al3.pdf
Spec. No. : C825L3 Issued Date : 2006.04.25 CYStech Electronics Corp.Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features High current, max. 600mA Low voltage, max. 40V Pb-free package Applications Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C BBase B CCollector EEmitter
kzt2222a.pdf
SMD Type TransistorsNPN TransistorsPZT2222A (KZT2222A)Unit:mmSOT-2236.500.23.000.1 Features4 Epitaxial planar die construction Complementary to PZT2907A1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC
fzt2222a.pdf
SMD Type TransistorsNPN Transistors FZT2222A (KZT2222A)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V Complementary to FZT2907A1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.BaseC 2.Collector3.Emitter4.60 (typ)B 4.CollectorE Absolute Maximum Ratings Ta
pzt2222a.pdf
SMD Type TransistorsNPN TransistorsPZT2222A (KZT2222A)Unit:mmSOT-2236.500.23.000.1 Features4 Epitaxial planar die construction Complementary to PZT2907A1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC
pzt2222-a.pdf
PZT2222 / PZT2222APZT2222 / PZT2222ASuface Mount Si-Epitaxial Planar Switching TransistorsNPN NPNSi-Epitaxie-Planar-Schalttransistoren fr die OberflchenmontageVersion 2006-05-09Power dissipation 1.3 W6.50.2Verlustleistung30.1 1.65Plastic case SOT-2234KunststoffgehuseTypeWeight approx. 0.04 gCodeGewicht ca.1 2 30.7Plastic material has UL classifica
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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