2N5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Búsqueda de reemplazo de transistor bipolar 2N5401

2N5401 Datasheet (PDF)

..1. 2n5400 2n5401.pdf Size:177K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5400/DAmplifier Transistors2N5400PNP Silicon*2N5401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123

..2. 2n5401 3.pdf Size:49K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistor1999 Apr 08Product specificationSupersedes data of 1997 May 22Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter

..3. 2n5401.pdf Size:52K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistorProduct specification 2004 Oct 28Supersedes data of 1999 Apr 08Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter G

..4. 2n5401 mmbt5401.pdf Size:75K _fairchild_semi

2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VI

..5. 2n5401.pdf Size:53K _samsung

2N5401 PNP EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -150 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation PC 625 m

..6. 2n5400 2n5401.pdf Size:80K _central

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

..7. 2n5401.pdf Size:275K _mcc

2N5401MCCTMMicro Commercial ComponentsELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteristic Symbol Min Max UnitOFF CHARACTERISTICSCollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc(IC = 1.0 mAdc, IB = 0) 150 CollectorBase Breakdown Voltage V(BR)CBO Vdc(IC = 100 mAdc, IE = 0) 160 EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc(IE

..8. 2n5401.pdf Size:219K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain, ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N5401L-x-AB3-R 2N5401G-x-AB3-R SOT-89 B C E Tape Reel2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C T

..9. 2n5401.pdf Size:250K _auk

2N5401PNP Silicon TransistorDescription PIN Connection General purpose amplifier E High voltage application Features B High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : CVCE(sat)=-0.5V(MAX.) TO-92 Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-9

..10. 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf Size:495K _no

..11. 2n5401.pdf Size:337K _secos

2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A DMillimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30

..12. 2n5401.pdf Size:274K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401TO-92CBECBEHigh Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector

..13. 2n5401.pdf Size:567K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5401 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. BASE Switching and Amplification in High Voltage 3. COLLECTOR Applications such as Telephony Low Current High VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Volta

..14. 2n5401.pdf Size:355K _kec

SEMICONDUCTOR 2N5401TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-

..15. 2n5401.pdf Size:204K _lge

2N5401(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -160 V

..16. 2n5401.pdf Size:680K _wietron

2N5401PNP TransistorsTO-9211. EMITTER 232. BASE3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N5401UnitCollector-Emitter Voltage VCEO -150 VdcCollector-Base Voltage VCBO -160VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC600 mAdcTotal Device Dissipation T =25 C PD W0.625AJunction Temperature T 150j CStorage, Temperature Tstg

..17. 2n5401.pdf Size:301K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

..18. 2n5401.pdf Size:307K _can-sheng

TO-92 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)TRANSISTOR (PNP)TRANSISTOR (PNP)2N5401 TRANSISTOR (PNP)FEATUREFEATUREFEATUREFEATURETO-92TO-92TO-92TO-92 Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Applications su

..19. 2n5401.pdf Size:895K _blue-rocket-elect

2N5401 Rev.F Mar-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , 2N5551 High voltages, complementary pair with 2N5551. / Applications General purpose high voltage amplifier. / Equivalent

..20. 2n5401.pdf Size:170K _first_silicon

SEMICONDUCTOR2N5401TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2

..21. 2n5401.pdf Size:750K _feihonltd

MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -160V PC 625mW High switching speed 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

..22. 2n5306 2n5306a 2n5307 2n5308 2n5308a 2n5309 2n5310 2n5354 2n5355 2n5356 2n5365 2n5366 2n5367 2n5400 2n5401 2n5418.pdf Size:1285K _sprague

..23. 2n5401.pdf Size:565K _jsmsemi

2N5401 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2.30F FM 0.51 MAXSymbol Pa

0.1. 2n5401hr.pdf Size:432K _st

2N5401HRHi-Rel PNP bipolar transistor 150 V, 0.5 ADatasheet - production dataFeatures 3BVCEO 150 V11IC (max) 0.5 A223HFE at 10 V - 150 mA > 60 TO-18 LCC-33 Hermetic packages4 ESCC and JANS qualified1 Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5401HR is a silicon planar PNP transistor

0.2. 2n5401g.pdf Size:121K _onsemi

2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer

 0.3. 2n5401-d.pdf Size:145K _onsemi

2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer

0.4. 2n5401ybu 2n5401yta.pdf Size:263K _onsemi

 0.5. 2n5401rlrag.pdf Size:121K _onsemi

2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer

0.6. 2n5401n.pdf Size:249K _auk

2N5401NSemiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T

0.7. 2n5401dcsm.pdf Size:10K _semelab

2N5401DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 150V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.

0.8. 2n5401csm.pdf Size:11K _semelab

2N5401CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 150V A =(0.04 0.00

0.9. 2n5401s.pdf Size:344K _kec

SEMICONDUCTOR 2N5401STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERS_FEATURES A 2.93 0.20+B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX23 D 0.40+0.15/-0.05: VCBO=-160V, VCEO=-150VE 2.40+0.30/-0.201Low Leakage Current. G 1.90H 0.95: ICBO=-50nA(Max.) @VCB=-120VJ 0.

0.10. 2n5401c.pdf Size:32K _kec

SEMICONDUCTOR 2N5401CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(

0.11. h2n5401.pdf Size:52K _hsmc

Spec. No. : HE6203HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5401 is designed for general purpose applications requiring highbreakdown voltages.TO-92Features Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))

0.12. 2n5401s.pdf Size:225K _first_silicon

SEMICONDUCTOR2N5401STECHNICAL DATAHigh Voltage TransistorFEATURE3We declare that the material of product compliance with RoHS requirements.21DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping SOT232N5401S 2L 3000/Tape&ReelMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CB

0.13. 2n5401b.pdf Size:569K _feihonltd

MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

0.14. 2n5401u.pdf Size:1087K _cn_cbi

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v) MARKING: 5401MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Volta

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: UP3855 | UB1580 | S2000AFI | SS8550-MS | SS8050-MS | S9018-MS | S9015-MS | S9014-MS | S9013-MS | S9012-MS | S8550-MS | S8050-MS | MS13001 | MMBTA94-MS | MMBTA92-MS | MMBTA44-MS | MMBTA42-MS | MMBT5551-MS | MMBT5401-MS | MMBT3906T-MS | MMBT3906-MS