2N5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5401
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
2N5401 Transistor Equivalent Substitute - Cross-Reference Search
2N5401 Datasheet (PDF)
2n5400 2n5401.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5400/DAmplifier Transistors2N5400PNP Silicon*2N5401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123
2n5401 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistor1999 Apr 08Product specificationSupersedes data of 1997 May 22Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter
2n5401.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistorProduct specification 2004 Oct 28Supersedes data of 1999 Apr 08Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter G
2n5401 mmbt5401.pdf
2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VI
2n5401.pdf
2N5401 PNP EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -150 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation PC 625 m
2n5400 2n5401.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5401.pdf
2N5401MCCTMMicro Commercial ComponentsELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteristic Symbol Min Max UnitOFF CHARACTERISTICSCollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc(IC = 1.0 mAdc, IB = 0) 150 CollectorBase Breakdown Voltage V(BR)CBO Vdc(IC = 100 mAdc, IE = 0) 160 EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc(IE
2n5401.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain, ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2N5401G-x-AB3-R SOT-89 B C E Tape Reel2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box2N5401
2n5401.pdf
2N5401PNP Silicon TransistorDescription PIN Connection General purpose amplifier E High voltage application Features B High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : CVCE(sat)=-0.5V(MAX.) TO-92 Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-9
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2n5401.pdf
2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A DMillimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30
2n5401.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401TO-92CBECBEHigh Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector
2n5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5401 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. BASE Switching and Amplification in High Voltage 3. COLLECTOR Applications such as Telephony Low Current High VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Volta
2n5401.pdf
SEMICONDUCTOR 2N5401TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-
2n5401.pdf
2N5401(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -160 V
2n5401.pdf
2N5401PNP TransistorsTO-9211. EMITTER 232. BASE3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N5401UnitCollector-Emitter Voltage VCEO -150 VdcCollector-Base Voltage VCBO -160VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC600 mAdcTotal Device Dissipation T =25 C PD W0.625AJunction Temperature T 150j CStorage, Temperature Tstg
2n5401.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value
2n5401.pdf
TO-92 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)TRANSISTOR (PNP)TRANSISTOR (PNP)2N5401 TRANSISTOR (PNP)FEATUREFEATUREFEATUREFEATURETO-92TO-92TO-92TO-92 Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Applications su
2n5401.pdf
2N5401 Rev.F Mar-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , 2N5551 High voltages, complementary pair with 2N5551. / Applications General purpose high voltage amplifier. / Equivalent
2n5401.pdf
SEMICONDUCTOR2N5401TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2
2n5401.pdf
MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -160V PC 625mW High switching speed 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit
2n5401.pdf
2N5401TO-92 Plastic-Encapsulate Transistors FEATURES TO 92 Switching and Amplification in High Voltage Applications such as Telephony 1. EMITTER Low Current High Voltage 2. BASE PNP Transistors3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEB
2n5306 2n5306a 2n5307 2n5308 2n5308a 2n5309 2n5310 2n5354 2n5355 2n5356 2n5365 2n5366 2n5367 2n5400 2n5401 2n5418.pdf
2n5401.pdf
2N5401 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2.30F FM 0.51 MAXSymbol Pa
2n5401hr.pdf
2N5401HRHi-Rel PNP bipolar transistor 150 V, 0.5 ADatasheet - production dataFeatures 3BVCEO 150 V11IC (max) 0.5 A223HFE at 10 V - 150 mA > 60 TO-18 LCC-33 Hermetic packages4 ESCC and JANS qualified1 Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5401HR is a silicon planar PNP transistor
2n5401g.pdf
2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer
2n5401-d.pdf
2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer
2n5401rlrag.pdf
2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDer
2n5401n.pdf
2N5401NSemiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T
2n5401dcsm.pdf
2N5401DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 150V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.
2n5401csm.pdf
2N5401CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 150V A =(0.04 0.00
2n5401s.pdf
SEMICONDUCTOR 2N5401STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERS_FEATURES A 2.93 0.20+B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX23 D 0.40+0.15/-0.05: VCBO=-160V, VCEO=-150VE 2.40+0.30/-0.201Low Leakage Current. G 1.90H 0.95: ICBO=-50nA(Max.) @VCB=-120VJ 0.
2n5401c.pdf
SEMICONDUCTOR 2N5401CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(
h2n5401.pdf
Spec. No. : HE6203HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5401 is designed for general purpose applications requiring highbreakdown voltages.TO-92Features Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
2n5401s.pdf
SEMICONDUCTOR2N5401STECHNICAL DATAHigh Voltage TransistorFEATURE3We declare that the material of product compliance with RoHS requirements.21DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping SOT232N5401S 2L 3000/Tape&ReelMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CB
2n5401b.pdf
MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit
2n5401u.pdf
Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v) MARKING: 5401MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Volta
Datasheet: 2N538M , 2N539 , 2N5390 , 2N5399 , 2N539A , 2N54 , 2N540 , 2N5400 , TIP122 , 2N5404 , 2N5405 , 2N5406 , 2N5407 , 2N5408 , 2N5409 , 2N540A , 2N541 .
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