All Transistors. 2N5401 Datasheet

 

2N5401 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5401

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.31 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

2N5401 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5401 Datasheet (PDF)

1.1. 2n5401g.pdf Size:121K _upd

2N5401
2N5401

2N5401 Amplifier Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Der

1.2. 2n5401rlrag.pdf Size:121K _upd

2N5401
2N5401

2N5401 Amplifier Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Der

 1.3. 2n5401csm.pdf Size:11K _upd

2N5401

2N5401CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 150V A = (0.04 ± 0.00

1.4. 2n5401dcsm.pdf Size:10K _upd

2N5401

2N5401DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 150V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0.

 1.5. 2n5401hr.pdf Size:432K _upd

2N5401
2N5401

2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 BVCEO 150 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 10 V - 150 mA > 60 TO-18 LCC-3 3 • Hermetic packages 4 • ESCC and JANS qualified 1 • Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5401HR is a silicon planar PNP transistor

1.6. 2n5401n.pdf Size:249K _upd

2N5401
2N5401

2N5401N Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T

1.7. 2n5400 2n5401.pdf Size:177K _motorola

2N5401
2N5401

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5400/D Amplifier Transistors 2N5400 PNP Silicon * 2N5401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit CASE 2904, STYLE 1 TO92 (TO226AA) CollectorEmitter Voltage VCEO 120 150 Vdc CollectorBase Voltage VCBO 130 160 Vdc EmitterBase Voltage VEB

1.8. 2n5401.pdf Size:52K _philips

2N5401
2N5401

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification 2004 Oct 28 Supersedes data of 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 150 V). 1 collector 2 base APPLICATIONS 3 emitter General pu

1.9. 2n5401 3.pdf Size:49K _philips

2N5401
2N5401

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 150 V). 1 collector 2 base APPLICATIONS 3 emitter General p

1.10. 2n5401 mmbt5401.pdf Size:75K _fairchild_semi

2N5401
2N5401

2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Co

1.11. 2n5401.pdf Size:53K _samsung

2N5401
2N5401

2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 mW Junc

1.12. 2n5400 2n5401.pdf Size:80K _central

2N5401
2N5401

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.13. 2n5401.pdf Size:275K _mcc

2N5401
2N5401

2N5401 MCC TM Micro Commercial Components ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 150 CollectorBase Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) 160 EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc (IE = 10 mAdc, IC =

1.14. 2n5401-d.pdf Size:145K _onsemi

2N5401
2N5401

2N5401 Amplifier Transistors PNP Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate ab

1.15. 2n5401.pdf Size:219K _utc

2N5401
2N5401

UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain, ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N5401L-x-AB3-R 2N5401G-x-AB3-R SOT-89 B C E Tape Reel 2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box

1.16. 2n5401.pdf Size:250K _auk

2N5401
2N5401

2N5401 PNP Silicon Transistor Description PIN Connection • General purpose amplifier E • High voltage application Features B • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : C VCE(sat)=-0.5V(MAX.) TO-92 • Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-92

1.17. 2n5401.pdf Size:337K _secos

2N5401
2N5401

2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A D Millimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30 4.7

1.18. 2n5401.pdf Size:274K _cdil

2N5401
2N5401

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 TO-92 CBE C B E High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 150 V Collector -Ba

1.19. 2n5401.pdf Size:32K _kec

2N5401
2N5401

SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.5V(M

1.20. 2n5401s.pdf Size:33K _kec

2N5401
2N5401

SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=-160V, VCEO=-150V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=-50nA(Max.) @VCB=-120V J 0.1

1.21. 2n5401c.pdf Size:32K _kec

2N5401
2N5401

SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.5V(

1.22. 2n5401.pdf Size:204K _lge

2N5401
2N5401

2N5401(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -160 V VCEO

1.23. 2n5401.pdf Size:680K _wietron

2N5401
2N5401

2N5401 PNP Transistors TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5401 Unit Collector-Emitter Voltage V CEO -150 Vdc Collector-Base Voltage VCBO -160 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC 600 mAdc Total Device Dissipation T =25 C PD W 0.625 A Junction Temperature T 150 j C Storage, Temperature Tstg

1.24. h2n5401.pdf Size:52K _hsmc

2N5401
2N5401

Spec. No. : HE6203 HI-SINCERITY Issued Date : 1992.09.22 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages. TO-92 Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) Ab

1.25. 2n5401.pdf Size:307K _can-sheng

2N5401
2N5401

TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) TRANSISTOR (PNP) TRANSISTOR (PNP) 2N5401 TRANSISTOR (PNP) FEATURE FEATURE FEATURE FEATURE TO-92 TO-92 TO-92 TO-92 � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Applications su

1.26. 2n5401.pdf Size:170K _first_silicon

2N5401
2N5401

SEMICONDUCTOR 2N5401 TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAX E B 4.80 MAX G High Voltage(Max.160v) C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) H J 14.00 0.50 + L 2

1.27. 2n5401s.pdf Size:225K _first_silicon

2N5401
2N5401

SEMICONDUCTOR 2N5401S TECHNICAL DATA High Voltage Transistor FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT–23 2N5401S 2L 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V – 150 Vdc CEO 3 COLLECTOR Collector–Base Voltage V CB

1.28. 2n5401.pdf Size:301K _shenzhen-tuofeng-semi

2N5401
2N5401

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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