BFG10W-X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG10W-X
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.25 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: SOT343
Búsqueda de reemplazo de transistor bipolar BFG10W-X
BFG10W-X Datasheet (PDF)
bfg10wx.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an
bfg10wx 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG10W/XUHF power transistor1995 Sep 22Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistorencapsulated in a plastic, 4-pinfpage Small size discrete power amplifier 4 3dua
bfg10wx.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
