BFG10W-X Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG10W-X

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 2.5 V

Corriente del colector DC máxima (Ic): 0.25 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: SOT343

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BFG10W-X datasheet

 8.1. Size:240K  philips
 bfg10wx.pdf pdf_icon

BFG10W-X

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an

 8.2. Size:48K  philips
 bfg10wx 1.pdf pdf_icon

BFG10W-X

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor 1995 Sep 22 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin fpage Small size discrete power amplifier 4 3 dua

 8.3. Size:240K  nxp
 bfg10wx.pdf pdf_icon

BFG10W-X

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an

MOSTRAR MÁS

Otros transistores... BCV65, BDL31, BDL32, BDP31, BDP32, BFE505, BFE520, BFG10, TIP120, BFG11, BFG11-X, BFG11W-X, BFG21W, 2SB1366F-O, BFG31, BFG403W, BFG425W