BFG10W-X pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BFG10W-X Specs and Replacement

Type Designator: BFG10W-X

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT343

BFG10W-X Substitution

- BJT ⓘ Cross-Reference Search

BFG10W-X datasheet

8.1. Size:240K philips

bfg10wx.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an... See More ⇒

8.2. Size:48K philips

bfg10wx 1.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor 1995 Sep 22 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin fpage Small size discrete power amplifier 4 3 dua... See More ⇒

8.3. Size:240K nxp

bfg10wx.pdf pdf_icon