BFG425W Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG425W
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.135 W
Tensión colector-base (Vcb): 10 V
Tensión colector-emisor (Vce): 4.5 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 25000 MHz
Capacitancia de salida (Cc): 0.3 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: SOT343R
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BFG425W datasheet
bfg425w.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitte
bfg425w.pdf
SMD Type Transistors NPN Transistors BFG425W (KFG425W) SOT-343R Unit mm 2.0 0.2 1.25 0.1 A X Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=4.5V 0 0.1 2.1 0.1 1.30(Typ) Very high power gain 3 4 Low noise figure 0.23 (max) 0.13 (min) High transition frequency 2 1 0.45(max) 0.35 0.05 0.60 0.1 0.1(max) 0.15(max
bfg425w.pdf
isc Silicon NPN RF Transistor BFG425W DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 10 V CBO
Otros transistores... BFG10W-X, BFG11, BFG11-X, BFG11W-X, BFG21W, 2SB1366F-O, BFG31, BFG403W, 2SC5200, BFG505, BFG505W, BFG520, BFG520W, BFG590, BFG590W, BFG591, BFG480W
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