DISCRETE SEMICONDUCTORS DATA SHEETBFG425WNPN 25 GHz wideband transistorProduct specification 2010 Sep 15Supersedes data of 1998 Mar 11NXP Semiconductors Product specificationNPN 25 GHz wideband transistor BFG425WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1emitter High transition frequency2base Emitter is thermal lead3emitte

DISCRETE SEMICONDUCTORSBFG425WNPN 25 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 28File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 25 GHz wideband transistor BFG425WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1 emitter High transition frequency2 base

SMD Type TransistorsNPN TransistorsBFG425W (KFG425W)SOT-343R Unit:mm2.00.21.250.1AX Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=4.5V0~0.12.10.11.30(Typ) Very high power gain3 4 Low noise figure0.23 (max)0.13 (min) High transition frequency2 10.45(max)0.350.05 0.600.10.1(max)0.15(max

isc Silicon NPN RF Transistor BFG425WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in RF wideband amplifiers and oscillators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 10 VCBO

BFG424WNPN 25 GHz wideband transistorRev. 01 21 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN double polysilicon wideband transistor with buried layer for low voltage applicationsin a plastic, 4-pin dual-emitter SOT343R package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be takenduring transport and ha

BFG424FNPN 25 GHz wideband transistorRev. 01 21 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN double polysilicon wideband transistor with buried layer for low voltage applicationsin a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be takenduring transport and ha