BFG425W pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BFG425W Specs and Replacement

Type Designator: BFG425W

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.135 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 4.5 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25000 MHz

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT343R

BFG425W Substitution

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BFG425W datasheet

..1. Size:143K philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitte... See More ⇒

..2. Size:90K philips

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..3. Size:1657K kexin

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SMD Type Transistors NPN Transistors BFG425W (KFG425W) SOT-343R Unit mm 2.0 0.2 1.25 0.1 A X Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=4.5V 0 0.1 2.1 0.1 1.30(Typ) Very high power gain 3 4 Low noise figure 0.23 (max) 0.13 (min) High transition frequency 2 1 0.45(max) 0.35 0.05 0.60 0.1 0.1(max) 0.15(max... See More ⇒

..4. Size:210K inchange semiconductor

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isc Silicon NPN RF Transistor BFG425W DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 10 V CBO ... See More ⇒