BFR520 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR520
Código: N28
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000 MHz
Capacitancia de salida (Cc): 0.5 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT23
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BFR520 Datasheet (PDF)
bfr520.pdf
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BFR520NPN 9 GHz wideband transistorRev. 03 1 September 2004 Product data sheet1. Product profile1.1 General descriptionThe BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.1.3 Applications RF front end wideband applic
bfr520 cnv 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBFR520NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520telephones (CT1, CT2, DECT, etc.),FEATURESradar detectors, pagers and satellite High power gainTV tuners (SATV) and repeater Low noise figu
bfr520.pdf
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isc Silicon NPN RF Transistor BFR520DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless.ABSOLUTE MAXIMUM RATINGS(T =25)a
bfr520t 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFR520TNPN 9 GHz wideband transistorProduct specification 2000 Apr 03Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520TFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulatedin a plastic SOT416 (SC-75) package. Low noise figure 3fpage High tr
bfr520t.pdf
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DISCRETE SEMICONDUCTORS DATA SHEETM3D173BFR520TNPN 9 GHz wideband transistorProduct specification 2000 Apr 03Supersedes data of 1999 Nov 02NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520TFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. Low noise figure 3lfpage High tr
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