BFR520 Specs and Replacement

Type Designator: BFR520

SMD Transistor Code: N28

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.5 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

 BFR520 Substitution

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BFR520 datasheet

 ..1. Size:116K  philips

bfr520.pdf pdf_icon

BFR520

BFR520 NPN 9 GHz wideband transistor Rev. 03 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Applications RF front end wideband applic... See More ⇒

 ..2. Size:103K  philips

bfr520 cnv 2.pdf pdf_icon

BFR520

DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones (CT1, CT2, DECT, etc.), FEATURES radar detectors, pagers and satellite High power gain TV tuners (SATV) and repeater Low noise figu... See More ⇒

 ..3. Size:203K  inchange semiconductor

bfr520.pdf pdf_icon

BFR520

isc Silicon NPN RF Transistor BFR520 DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 0.1. Size:109K  philips

bfr520t 2.pdf pdf_icon

BFR520

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification 2000 Apr 03 Supersedes data of 1999 Nov 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. Low noise figure 3 fpage High tr... See More ⇒

Detailed specifications: BFG480W, BFM505, BFM520, BFQ131, BFQ151, BFQ166, BFQ256, BFQ256A, TIP122, BFR520T, BFS25A, BFS520, BFS540, BLS2731-10, BLS2731-110, BLS2731-20, BLS2731-50

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