BFS520 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFS520
Código: N2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000 MHz
Capacitancia de salida (Cc): 0.5 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT323 SC70
Búsqueda de reemplazo de transistor bipolar BFS520
BFS520 Datasheet (PDF)
bfs520.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFS520NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFS520It is intended for widebandFEATURESapplications such as satellite TV High power gaintuners, cellular phones, cordlesshandbook, 2 columns3
bfs520 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFS520NPN 9 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFS520FEATURES It is intended for wideband applications such as satellite TV High power gaintuners, cellular phones, cordless 3handbook, 2 columns Low noise figurephones, pagers etc., w
bfs520.pdf
SMD Type TransistorsNPN TransistorsBFS520 (KFS520) Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=15V High power gain Low noise figure High transition frequency1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage
bfs520.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor BFS520DESCRIPTIONLow Noise and High GainNF = 1.5 dB TYP@V = 6V, I = 5 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHFABSO
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
