BFS520 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETBFS520NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFS520It is intended for widebandFEATURESapplications such as satellite TV High power gaintuners, cellular phones, cordlesshandbook, 2 columns3

DISCRETE SEMICONDUCTORS DATA SHEETBFS520NPN 9 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFS520FEATURES It is intended for wideband applications such as satellite TV High power gaintuners, cellular phones, cordless 3handbook, 2 columns Low noise figurephones, pagers etc., w

SMD Type TransistorsNPN TransistorsBFS520 (KFS520) Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=15V High power gain Low noise figure High transition frequency1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage

INCHANGE Semiconductorisc Silicon NPN RF Transistor BFS520DESCRIPTIONLow Noise and High GainNF = 1.5 dB TYP@V = 6V, I = 5 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHFABSO