All Transistors. BFS520 Datasheet

 

BFS520 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFS520
   SMD Transistor Code: N2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT323 SC70

 BFS520 Transistor Equivalent Substitute - Cross-Reference Search

   

BFS520 Datasheet (PDF)

 ..1. Size:89K  philips
bfs520.pdf

BFS520
BFS520

DISCRETE SEMICONDUCTORSDATA SHEETBFS520NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFS520It is intended for widebandFEATURESapplications such as satellite TV High power gaintuners, cellular phones, cordlesshandbook, 2 columns3

 ..2. Size:263K  philips
bfs520 cnv.pdf

BFS520
BFS520

DISCRETE SEMICONDUCTORS DATA SHEETBFS520NPN 9 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFS520FEATURES It is intended for wideband applications such as satellite TV High power gaintuners, cellular phones, cordless 3handbook, 2 columns Low noise figurephones, pagers etc., w

 ..3. Size:1310K  kexin
bfs520.pdf

BFS520
BFS520

SMD Type TransistorsNPN TransistorsBFS520 (KFS520) Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=15V High power gain Low noise figure High transition frequency1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage

 ..4. Size:211K  inchange semiconductor
bfs520.pdf

BFS520
BFS520

INCHANGE Semiconductorisc Silicon NPN RF Transistor BFS520DESCRIPTIONLow Noise and High GainNF = 1.5 dB TYP@V = 6V, I = 5 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHFABSO

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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