BU2515DF Todos los transistores

 

BU2515DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2515DF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 13.5 V
   Corriente del colector DC máxima (Ic): 9 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 13
   Paquete / Cubierta: SOT199
 

 Búsqueda de reemplazo de BU2515DF

   - Selección ⓘ de transistores por parámetros

 

BU2515DF Datasheet (PDF)

 ..1. Size:54K  philips
 bu2515df 1.pdf pdf_icon

BU2515DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plasticenvelope intended for use in horizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter

 ..2. Size:213K  inchange semiconductor
 bu2515df.pdf pdf_icon

BU2515DF

isc Silicon NPN Power Transistor BU2515DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 7.1. Size:217K  inchange semiconductor
 bu2515dx.pdf pdf_icon

BU2515DF

isc Silicon NPN Power Transistor BU2515DXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 8.1. Size:51K  philips
 bu2515ax bu2515ax 1.pdf pdf_icon

BU2515DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0

MOSTRAR MÁS

Otros transistores... BRY56A , BRY61 , BRY62 , BU1506DX , BU1507AX , BU1507DX , BU2507DF , BU2515AF , 2SB817 , BU2522DF , BU2522DX , BU2523DF , BU2523DX , BU2525DF , BU2525DW , BU2525DX , BU2527DF .

History: KST4403

 

 
Back to Top

 


 
.