BU2515DF PDF and Equivalents Search

 

BU2515DF Specs and Replacement

Type Designator: BU2515DF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 13.5 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 22 pF

Forward Current Transfer Ratio (hFE), MIN: 13

Noise Figure, dB: -

Package: SOT199

 BU2515DF Substitution

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BU2515DF datasheet

 ..1. Size:54K  philips

bu2515df 1.pdf pdf_icon

BU2515DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter ... See More ⇒

 ..2. Size:213K  inchange semiconductor

bu2515df.pdf pdf_icon

BU2515DF

isc Silicon NPN Power Transistor BU2515DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 7.1. Size:217K  inchange semiconductor

bu2515dx.pdf pdf_icon

BU2515DF

isc Silicon NPN Power Transistor BU2515DX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 8.1. Size:51K  philips

bu2515ax bu2515ax 1.pdf pdf_icon

BU2515DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 ... See More ⇒

Detailed specifications: BRY56A, BRY61, BRY62, BU1506DX, BU1507AX, BU1507DX, BU2507DF, BU2515AF, S9013, BU2522DF, BU2522DX, BU2523DF, BU2523DX, BU2525DF, BU2525DW, BU2525DX, BU2527DF

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