BU2527DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2527DF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 13.5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 145 pF
Ganancia de corriente contínua (hfe): 11
Paquete / Cubierta: SOT199
Búsqueda de reemplazo de transistor bipolar BU2527DF
BU2527DF Datasheet (PDF)
bu2527df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE
bu2527df.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CON
bu2527df.pdf
isc Silicon NPN Power Transistor BU2527DFDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
bu2527dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE
bu2527dx.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DX DESCRIPTION With TO-3PML package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Absolute
bu2527dx.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BU2527DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
