BU2527DF Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2527DF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 13.5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 145 pF
Ganancia de corriente contínua (hFE): 11
Encapsulados: SOT199
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BU2527DF datasheet
bu2527df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance. QUICK REFERENCE DATA SYMBOL PARAMETE
bu2527df.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CON
bu2527df.pdf
isc Silicon NPN Power Transistor BU2527DF DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol
bu2527dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance. QUICK REFERENCE DATA SYMBOL PARAMETE
Otros transistores... BU2515DF , BU2522DF , BU2522DX , BU2523DF , BU2523DX , BU2525DF , BU2525DW , BU2525DX , NJW0281G , 2DA2018 , 2DB1119S , 2DB1386Q , 2DB1386R , 2DB1424R , 2DB1689 , 2DB1697 , 2DB1713 .
History: 2SB1353
History: 2SB1353
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