All Transistors. BU2527DF Datasheet

 

BU2527DF Datasheet and Replacement


   Type Designator: BU2527DF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 13.5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 145 pF
   Forward Current Transfer Ratio (hFE), MIN: 11
   Noise Figure, dB: -
   Package: SOT199
 

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BU2527DF Datasheet (PDF)

 ..1. Size:62K  philips
bu2527df 1.pdf pdf_icon

BU2527DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE

 ..2. Size:82K  jmnic
bu2527df.pdf pdf_icon

BU2527DF

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CON

 ..3. Size:212K  inchange semiconductor
bu2527df.pdf pdf_icon

BU2527DF

isc Silicon NPN Power Transistor BU2527DFDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 7.1. Size:63K  philips
bu2527dx 1.pdf pdf_icon

BU2527DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE

Datasheet: BU2515DF , BU2522DF , BU2522DX , BU2523DF , BU2523DX , BU2525DF , BU2525DW , BU2525DX , D965 , 2DA2018 , 2DB1119S , 2DB1386Q , 2DB1386R , 2DB1424R , 2DB1689 , 2DB1697 , 2DB1713 .

History: 2SC491

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