BU2527DF PDF and Equivalents Search

 

BU2527DF Specs and Replacement

Type Designator: BU2527DF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 13.5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 145 pF

Forward Current Transfer Ratio (hFE), MIN: 11

Noise Figure, dB: -

Package: SOT199

 BU2527DF Substitution

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BU2527DF datasheet

 ..1. Size:62K  philips

bu2527df 1.pdf pdf_icon

BU2527DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance. QUICK REFERENCE DATA SYMBOL PARAMETE... See More ⇒

 ..2. Size:82K  jmnic

bu2527df.pdf pdf_icon

BU2527DF

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CON... See More ⇒

 ..3. Size:212K  inchange semiconductor

bu2527df.pdf pdf_icon

BU2527DF

isc Silicon NPN Power Transistor BU2527DF DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒

 7.1. Size:63K  philips

bu2527dx 1.pdf pdf_icon

BU2527DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance. QUICK REFERENCE DATA SYMBOL PARAMETE... See More ⇒

Detailed specifications: BU2515DF, BU2522DF, BU2522DX, BU2523DF, BU2523DX, BU2525DF, BU2525DW, BU2525DX, NJW0281G, 2DA2018, 2DB1119S, 2DB1386Q, 2DB1386R, 2DB1424R, 2DB1689, 2DB1697, 2DB1713

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