ZXT11N15DF Todos los transistores

 

ZXT11N15DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXT11N15DF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-emisor (Vce): 15 V
   Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 145 MHz
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT23
 

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ZXT11N15DF Datasheet (PDF)

 ..1. Size:416K  diodes
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ZXT11N15DF

ZXT11N15DFSuperSOT415V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=15V; RSAT = 37m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveSOT23extremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.FEATURES

 8.1. Size:411K  diodes
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ZXT11N15DF

ZXT11N20DFSuperSOT420V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowSOT23voltage switching applications.FEATURES

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N1383V | 2N109-5 | 2N3424 | 2N1049 | 2N1262A | ZDT6753 | ZTX694B

 

 
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