All Transistors. ZXT11N15DF Datasheet

 

ZXT11N15DF Datasheet, Equivalent, Cross Reference Search


   Type Designator: ZXT11N15DF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 3 A
   Transition Frequency (ft): 145 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT23

 ZXT11N15DF Transistor Equivalent Substitute - Cross-Reference Search

   

ZXT11N15DF Datasheet (PDF)

 ..1. Size:416K  diodes
zxt11n15df.pdf

ZXT11N15DF
ZXT11N15DF

ZXT11N15DFSuperSOT415V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=15V; RSAT = 37m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveSOT23extremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.FEATURES

 8.1. Size:411K  diodes
zxt11n20df.pdf

ZXT11N15DF
ZXT11N15DF

ZXT11N20DFSuperSOT420V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowSOT23voltage switching applications.FEATURES

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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