All Transistors. ZXT11N15DF Datasheet

 

ZXT11N15DF Datasheet and Replacement


   Type Designator: ZXT11N15DF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 3 A
   Transition Frequency (ft): 145 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT23
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ZXT11N15DF Datasheet (PDF)

 ..1. Size:416K  diodes
 zxt11n15df.pdf pdf_icon

ZXT11N15DF

ZXT11N15DFSuperSOT415V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=15V; RSAT = 37m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveSOT23extremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.FEATURES

 8.1. Size:411K  diodes
 zxt11n20df.pdf pdf_icon

ZXT11N15DF

ZXT11N20DFSuperSOT420V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowSOT23voltage switching applications.FEATURES

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT8107D2 | BFQ17P | KTC9012SC | UN9217R | 2N1056 | 2SC999A | ECG2306

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