ZXT11N15DF Specs and Replacement
Type Designator: ZXT11N15DF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 3 A
Electrical Characteristics
Transition Frequency (ft): 145 MHz
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SOT23
ZXT11N15DF Substitution
- BJT ⓘ Cross-Reference Search
ZXT11N15DF datasheet
ZXT11N15DF SuperSOT4 15V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=15V; RSAT = 37m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give SOT23 extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES ... See More ⇒
Detailed specifications: ZUMT618, ZUMT717, ZUMT718, ZX5T2E6, ZXT10N15DE6, ZXT10N20DE6, ZXT10P12DE6, ZXT10P20DE6, 8550, ZXT11N20DF, ZXT12N20DX, ZXT12P12DX, ZXT13N15DE6, ZXT13N20DE6, ZXT13P12DE6, ZXT13P20DE6, ZXT2MA
Keywords - ZXT11N15DF pdf specs
ZXT11N15DF cross reference
ZXT11N15DF equivalent finder
ZXT11N15DF pdf lookup
ZXT11N15DF substitution
ZXT11N15DF replacement
