ZXT12P12DX Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXT12P12DX  📄📄 

Código: T12P12DX

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.25 W

Tensión colector-emisor (Vce): 12 V

Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 85 MHz

Ganancia de corriente contínua (hFE): 300

Encapsulados: MSOP-8

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ZXT12P12DX datasheet

 ..1. Size:264K  diodes
 zxt12p12dx.pdf pdf_icon

ZXT12P12DX

ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO

 8.1. Size:260K  diodes
 zxt12p20dx.pdf pdf_icon

ZXT12P12DX

ZXT12P20DX SuperSOT4 DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 64m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. M

 8.2. Size:327K  diodes
 zxt12p40dx.pdf pdf_icon

ZXT12P12DX

ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO

 9.1. Size:265K  diodes
 zxt12n20dx.pdf pdf_icon

ZXT12P12DX

ZXT12N20DX SuperSOT4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO

MOSTRAR MÁS

Otros transistores... ZX5T2E6, ZXT10N15DE6, ZXT10N20DE6, ZXT10P12DE6, ZXT10P20DE6, ZXT11N15DF, ZXT11N20DF, ZXT12N20DX, C3198, ZXT13N15DE6, ZXT13N20DE6, ZXT13P12DE6, ZXT13P20DE6, ZXT2MA, ZXTC2061E6, ZXTC2062E6, ZXTC6717MC