Справочник транзисторов. ZXT12P12DX

 

Биполярный транзистор ZXT12P12DX - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: ZXT12P12DX
   Маркировка: T12P12DX
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 1.25 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Граничная частота коэффициента передачи тока (ft): 85 MHz
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: MSOP-8

 Аналоги (замена) для ZXT12P12DX

 

 

ZXT12P12DX Datasheet (PDF)

 ..1. Size:264K  diodes
zxt12p12dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12P12DXSuperSOT4DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 47m ; IC= -3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 8.1. Size:260K  diodes
zxt12p20dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12P20DXSuperSOT4DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-20V; RSAT = 64m ; IC= -2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.M

 8.2. Size:327K  diodes
zxt12p40dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12P40DXSuperSOT4DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-40V; RSAT = 75m ; IC= -2ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 9.1. Size:265K  diodes
zxt12n20dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12N20DXSuperSOT4DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 3.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 9.2. Size:261K  diodes
zxt12n50dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12N50DXSuperSOT4DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=50V; RSAT = 45m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSOP8

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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