Биполярный транзистор ZXT12P12DX - описание производителя. Основные параметры. Даташиты.
Наименование производителя: ZXT12P12DX
Маркировка: T12P12DX
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.25 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Граничная частота коэффициента передачи тока (ft): 85 MHz
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: MSOP-8
Аналоги (замена) для ZXT12P12DX
ZXT12P12DX Datasheet (PDF)
zxt12p12dx.pdf
ZXT12P12DXSuperSOT4DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 47m ; IC= -3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO
zxt12p20dx.pdf
ZXT12P20DXSuperSOT4DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-20V; RSAT = 64m ; IC= -2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.M
zxt12p40dx.pdf
ZXT12P40DXSuperSOT4DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-40V; RSAT = 75m ; IC= -2ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO
zxt12n20dx.pdf
ZXT12N20DXSuperSOT4DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 3.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO
zxt12n50dx.pdf
ZXT12N50DXSuperSOT4DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=50V; RSAT = 45m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSOP8
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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