All Transistors. ZXT12P12DX Datasheet

 

ZXT12P12DX Datasheet, Equivalent, Cross Reference Search


   Type Designator: ZXT12P12DX
   SMD Transistor Code: T12P12DX
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 3 A
   Transition Frequency (ft): 85 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: MSOP-8

 ZXT12P12DX Transistor Equivalent Substitute - Cross-Reference Search

   

ZXT12P12DX Datasheet (PDF)

 ..1. Size:264K  diodes
zxt12p12dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12P12DXSuperSOT4DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 47m ; IC= -3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 8.1. Size:260K  diodes
zxt12p20dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12P20DXSuperSOT4DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-20V; RSAT = 64m ; IC= -2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.M

 8.2. Size:327K  diodes
zxt12p40dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12P40DXSuperSOT4DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-40V; RSAT = 75m ; IC= -2ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 9.1. Size:265K  diodes
zxt12n20dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12N20DXSuperSOT4DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 3.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 9.2. Size:261K  diodes
zxt12n50dx.pdf

ZXT12P12DX
ZXT12P12DX

ZXT12N50DXSuperSOT4DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=50V; RSAT = 45m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSOP8

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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