DPLS350Y Todos los transistores

 

DPLS350Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DPLS350Y
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT89
 

 Búsqueda de reemplazo de DPLS350Y

   - Selección ⓘ de transistores por parámetros

 

DPLS350Y Datasheet (PDF)

 ..1. Size:382K  diodes
 dpls350y.pdf pdf_icon

DPLS350Y

DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -50V Case: SOT89 IC = -3A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM up to -5A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturatio

 7.1. Size:134K  diodes
 dpls350e.pdf pdf_icon

DPLS350Y

DPLS350ELOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-223 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switchi

 7.2. Size:1350K  kexin
 dpls350e.pdf pdf_icon

DPLS350Y

SMD Type TransistorsPNP TransistorsDPLS350E (KPLS350E)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V Complementary to DNLS350E1 2 3COLLECTOR2,40.2502.30 (typ)Gauge Plane1.Base1 2.CollectorBASE0.700.13.Emitter4.60 (typ) 4.Collector3EMITTER Absolute Maxim

 9.1. Size:158K  diodes
 dpls315e.pdf pdf_icon

DPLS350Y

DPLS315EDPLS315E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A Complementary NPN Type Available (DNLS412E) Ideally Suited for Automated Assembly Proces

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: A9015 | 2SC3511 | 2SB654A | OC602 | RS7406 | KRC652E | D16K4

 

 
Back to Top

 


 
.