All Transistors. DPLS350Y Datasheet

 

DPLS350Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: DPLS350Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 3 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89

 DPLS350Y Transistor Equivalent Substitute - Cross-Reference Search

   

DPLS350Y Datasheet (PDF)

 ..1. Size:382K  diodes
dpls350y.pdf

DPLS350Y
DPLS350Y

DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -50V Case: SOT89 IC = -3A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM up to -5A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturatio

 7.1. Size:134K  diodes
dpls350e.pdf

DPLS350Y
DPLS350Y

DPLS350ELOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-223 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switchi

 7.2. Size:1350K  kexin
dpls350e.pdf

DPLS350Y
DPLS350Y

SMD Type TransistorsPNP TransistorsDPLS350E (KPLS350E)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V Complementary to DNLS350E1 2 3COLLECTOR2,40.2502.30 (typ)Gauge Plane1.Base1 2.CollectorBASE0.700.13.Emitter4.60 (typ) 4.Collector3EMITTER Absolute Maxim

 9.1. Size:158K  diodes
dpls315e.pdf

DPLS350Y
DPLS350Y

DPLS315EDPLS315E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A Complementary NPN Type Available (DNLS412E) Ideally Suited for Automated Assembly Proces

 9.2. Size:174K  diodes
dpls320a.pdf

DPLS350Y
DPLS350Y

DPLS320A LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary NPN Type Available (DNLS320A) Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) Qualified to AEC-Q101 Standards fo

 9.3. Size:156K  diodes
dpls325e.pdf

DPLS350Y
DPLS350Y

DPLS325E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A Complementary NPN Type Available (DNLS320E) Ideally Suited for Automated Assembly Processes

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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