ZXTN5551G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXTN5551G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-emisor (Vce): 160 V
Corriente del colector DC máxima (Ic): 0.6 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT223
- Selección de transistores por parámetros
ZXTN5551G Datasheet (PDF)
zxtn5551g.pdf

NOT RECOMMENDED FOR NEW DESIGN A Product Line ofUSE DZT5551Diodes IncorporatedZXTN5551G160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020
zxtn5551fl.pdf

ZXTN5551FL160V, SOT23, NPN High voltage transistorSummary BVCEO > 160VBVEBO > 6VIC(cont) = 600mA PD = 330mWComplementary part number ZXTP5401FLDescriptionCA high voltage NPN transistor in a small outline surface mount package.FeaturesB 160V rating SOT23 packageEApplicationsE High voltage amplificationCOrdering informationDevice Reel size Tape w
zxtn5551z.pdf

NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z160V, SOT89, NPN high voltage transistor SummaryBVCEO > 160VBVEBO > 6VIC(cont) = 600mAPD = 1.2W Complementary part number ZXTP5401ZDescriptionCA high voltage NPN transistor in a small outline surface mount packageFeaturesB 160V rating SOT89 packageEApplicationsE High voltage amplificatio
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: PMBT2222AYS | BC860 | 2N2077 | BU526A-8 | BC846CLT1G | T1312 | 2SD2150S
History: PMBT2222AYS | BC860 | 2N2077 | BU526A-8 | BC846CLT1G | T1312 | 2SD2150S



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