All Transistors. ZXTN5551G Datasheet

 

ZXTN5551G Datasheet and Replacement


   Type Designator: ZXTN5551G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Collector Current |Ic max|: 0.6 A
   Transition Frequency (ft): 130 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT223
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ZXTN5551G Datasheet (PDF)

 ..1. Size:204K  diodes
 zxtn5551g.pdf pdf_icon

ZXTN5551G

NOT RECOMMENDED FOR NEW DESIGN A Product Line ofUSE DZT5551Diodes IncorporatedZXTN5551G160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020

 6.1. Size:212K  diodes
 zxtn5551fl.pdf pdf_icon

ZXTN5551G

ZXTN5551FL160V, SOT23, NPN High voltage transistorSummary BVCEO > 160VBVEBO > 6VIC(cont) = 600mA PD = 330mWComplementary part number ZXTP5401FLDescriptionCA high voltage NPN transistor in a small outline surface mount package.FeaturesB 160V rating SOT23 packageEApplicationsE High voltage amplificationCOrdering informationDevice Reel size Tape w

 6.2. Size:704K  diodes
 zxtn5551z.pdf pdf_icon

ZXTN5551G

NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z160V, SOT89, NPN high voltage transistor SummaryBVCEO > 160VBVEBO > 6VIC(cont) = 600mAPD = 1.2W Complementary part number ZXTP5401ZDescriptionCA high voltage NPN transistor in a small outline surface mount packageFeaturesB 160V rating SOT89 packageEApplicationsE High voltage amplificatio

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCY98 | 3DD13002B | GES6004 | KRA731E | BF418 | BC548B | UN9215J

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