2SC5200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5200

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 17 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 55

Empaquetado / Estuche: TO264

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2SC5200 Datasheet (PDF)

1.1. 2sc5200n.pdf Size:153K _update

2SC5200N Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 2SC5200N 2SC5200N 2SC5200N 1. Applications 1. Applications 1. Applications 1. Applications • Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output

1.2. 2sc5200bl.pdf Size:213K _update

RoHS 2SC5200BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 15A/230V/150W 5.00 20.00±0.20 18.00 ø3.30±0.20 TO-3PL FEATURES High breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL 0.60 3.20 TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05 heat sink with one screw 1 2 3 APPLICATIONS Suit

1.3. 2sc5200.pdf Size:148K _st

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features � High breakdown voltage VCEO = 230 V � Typical fT = 30 MHz Application � Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviou

1.4. 2sc5200.pdf Size:121K _toshiba

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm � High breakdown voltage: V = 230 V (min) CEO � Complementary to 2SA1943 � Suitable for use in 100-W high fidelity audio amplifier�s output stage Maximum Ratings (Tc = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO

1.5. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications � High-Fidelity Audio Output Amplifier � General Purpose Power Amplifier Features � High Current Capability: IC = 17A. TO-264 1 � High Power Dissipation : 150watts. � High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter � High Voltage : VCEO=250V � Wide S.O.A for reliable operation. � Excellent Gain Linearity

1.6. 2sc5200.pdf Size:171K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS ? FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube www.uniso

1.7. 2sc5200.pdf Size:276K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage application

Otros transistores... ZXTP2029F , ZXTP2039F , ZXTP25060BFH , ZXTP25100BFH , ZXTP25100CFH , ZXTP25100CZ , ZXTP722MA , 2SA1943 , BC237 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D .

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