2SC5200 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5200  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 230 V

Tensión colector-emisor (Vce): 230 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 150 pF

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO264

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SC5200

- Selecciónⓘ de transistores por parámetros

 

2SC5200 datasheet

 ..1. Size:148K  st
2sc5200.pdf pdf_icon

2SC5200

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Typical fT = 30 MHz Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity

 ..2. Size:121K  toshiba
2sc5200.pdf pdf_icon

2SC5200

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit mm High breakdown voltage V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter

 ..3. Size:476K  fairchild semi
2sc5200 fjl4315.pdf pdf_icon

2SC5200

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A. TO-264 1 High Power Dissipation 150watts. High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO=250V Wide S.O.A for reliable operation. Excel

 ..4. Size:222K  onsemi
fjl4315 2sc5200.pdf pdf_icon

2SC5200

DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 1. Base 2. Collector 3. Emitter Features 1 High Current Capability IC = 17 A TO-264-3LD CASE 340CA High Power Dissipation 150 W High Frequency 30 MHz High Voltage VCEO = 250 V MARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple

Otros transistores... ZXTP2029F, ZXTP2039F, ZXTP25060BFH, ZXTP25100BFH, ZXTP25100CFH, ZXTP25100CZ, ZXTP722MA, 2SA1943, 2SA1015, BDW94CF, FJA13009, FJA4210, FJA4213, FJA4310, FJA4313, FJB102, FJB3307D