2SC5200 Todos los transistores

 

2SC5200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5200

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 17 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 55

Empaquetado / Estuche: TO264

Búsqueda de reemplazo de transistor bipolar 2SC5200

 

2SC5200 Datasheet (PDF)

1.1. 2sc5200bl.pdf Size:213K _update

2SC5200
2SC5200

RoHS 2SC5200BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 15A/230V/150W 5.00 20.00±0.20 18.00 ø3.30±0.20 TO-3PL FEATURES High breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL 0.60 3.20 TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05 heat sink with one screw 1 2 3 APPLICATIONS Suit

1.2. 2sc5200n.pdf Size:153K _update

2SC5200
2SC5200

2SC5200N Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 2SC5200N 2SC5200N 2SC5200N 1. Applications 1. Applications 1. Applications 1. Applications • Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output

 1.3. 2sc5200.pdf Size:148K _st

2SC5200
2SC5200

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity

1.4. 2sc5200.pdf Size:121K _toshiba

2SC5200
2SC5200

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • High breakdown voltage: V = 230 V (min) CEO • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter

 1.5. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi

2SC5200
2SC5200

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. TO-264 1 • High Power Dissipation : 150watts. • High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excel

1.6. 2sc5200.pdf Size:171K _utc

2SC5200
2SC5200

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS ? FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube www.uniso

1.7. 2sc5200.pdf Size:216K _inchange_semiconductor

2SC5200
2SC5200

isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V = 230V(Min) (BR)CEO ·Complement to Type 2SA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency ampl

1.8. 2sc5200h.pdf Size:216K _inchange_semiconductor

2SC5200
2SC5200

isc Silicon NPN Power Transistor 2SC5200H DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V = 300V(Min) (BR)CEO ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applicati

1.9. 2sc5200bl.pdf Size:213K _nell

2SC5200
2SC5200

RoHS 2SC5200BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 15A/230V/150W 5.00 20.00±0.20 18.00 ø3.30±0.20 TO-3PL FEATURES High breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL 0.60 3.20 TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05 heat sink with one screw 1 2 3 APPLICATIONS Suit

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top

 


2SC5200
  2SC5200
  2SC5200
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: YZ21 | WT062 | TL142 | TIP3055T | TIP2955T | MN638S | MJE340T | MJE3055AT | MJ10012T | KTD1945 | KTC2202 | KTC2200 | KSD880W | BUX47AFI | BUX18A | BUW12W | BUW12AW | BUW11W | BUW11AW | BUV48BFI |

 

 

 
Back to Top