All Transistors. 2SC5200 Datasheet

 

2SC5200 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5200

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 17 A

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO264

2SC5200 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5200 Datasheet (PDF)

0.1. 2sc5200.pdf Size:148K _st

2SC5200
2SC5200

2SC5200High power NPN epitaxial planar bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Typical fT = 30 MHzApplication Audio power amplifier321DescriptionTO-264This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity

0.2. 2sc5200.pdf Size:121K _toshiba

2SC5200
2SC5200

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter

 0.3. 2sc5200n.pdf Size:153K _toshiba

2SC5200
2SC5200

2SC5200NBipolar Transistors Silicon NPN Triple-Diffused Type2SC5200N2SC5200N2SC5200N2SC5200N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 230 V (min)(2) Complementary to 2SA1943N(3) Recommended for 100-W high-fidelity audio frequency amplifier output

0.4. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi

2SC5200
2SC5200

January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel

 0.5. 2sc5200.pdf Size:171K _utc

2SC5200
2SC5200

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tubeww

0.6. 2sc5200bl.pdf Size:213K _nell

2SC5200
2SC5200

RoHS 2SC5200BL Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor15A/230V/150W5.0020.000.2018.003.300.20TO-3PLFEATURESHigh breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL0.603.20TO-3PL package which can be installed to the 5.450.05 5.450.05heat sink with one screw1 2 3 APPLICATIONSSuit

0.7. 2sc5200.pdf Size:216K _inchange_semiconductor

2SC5200
2SC5200

isc Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency ampl

0.8. 2sc5200n.pdf Size:212K _inchange_semiconductor

2SC5200
2SC5200

isc Silicon NPN Power Transistor 2SC5200NDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943NMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency am

0.9. 2sc5200h.pdf Size:216K _inchange_semiconductor

2SC5200
2SC5200

isc Silicon NPN Power Transistor 2SC5200HDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicati

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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