2SC5200 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5200
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 17 A
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO264
2SC5200 Transistor Equivalent Substitute - Cross-Reference Search
2SC5200 Datasheet (PDF)
0.1. 2sc5200.pdf 
Size:148K _st
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity
0.2. 2sc5200.pdf Size:121K _toshiba
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • High breakdown voltage: V = 230 V (min) CEO • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter
0.3. 2sc5200n.pdf Size:153K _toshiba
2SC5200N Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 2SC5200N 2SC5200N 2SC5200N 1. Applications 1. Applications 1. Applications 1. Applications • Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output
0.4. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi
January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. TO-264 1 • High Power Dissipation : 150watts. • High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excel
0.5. 2sc5200.pdf Size:171K _utc
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube ww
0.6. 2sc5200.pdf Size:216K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V = 230V(Min) (BR)CEO ·Complement to Type 2SA1943 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency ampl
0.7. 2sc5200h.pdf Size:216K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC5200H DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V = 300V(Min) (BR)CEO ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applicati
0.8. 2sc5200bl.pdf Size:213K _nell
RoHS 2SC5200BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 15A/230V/150W 5.00 20.00±0.20 18.00 ø3.30±0.20 TO-3PL FEATURES High breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL 0.60 3.20 TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05 heat sink with one screw 1 2 3 APPLICATIONS Suit
Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .
