All Transistors. 2SC5200 Datasheet

 

2SC5200 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC5200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 17 A
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO264

 2SC5200 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC5200 Datasheet (PDF)

 ..1. Size:148K  st
2sc5200.pdf

2SC5200 2SC5200

2SC5200High power NPN epitaxial planar bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Typical fT = 30 MHzApplication Audio power amplifier321DescriptionTO-264This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity

 ..2. Size:121K  toshiba
2sc5200.pdf

2SC5200 2SC5200

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter

 ..3. Size:476K  fairchild semi
2sc5200 fjl4315.pdf

2SC5200 2SC5200

January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel

 ..4. Size:222K  onsemi
fjl4315 2sc5200.pdf

2SC5200 2SC5200

DATA SHEETwww.onsemi.comNPN Epitaxial SiliconTransistorFJL4315, 2SC52001. Base2. Collector3. EmitterFeatures1 High Current Capability: IC = 17 ATO-264-3LDCASE 340CA High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 VMARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple

 ..5. Size:171K  utc
2sc5200.pdf

2SC5200 2SC5200

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tubeww

 ..6. Size:146K  cn minos
2sc5200.pdf

2SC5200 2SC5200

2SC5200Minos High Power ProductsNPN TRANSISTORSFeatures:Power Amplifier ApplicationsComplementaryto 2SA1943Highcollector voltage:VCEO=230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis pro

 ..7. Size:216K  inchange semiconductor
2sc5200.pdf

2SC5200 2SC5200

isc Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency ampl

 0.1. Size:153K  toshiba
2sc5200n.pdf

2SC5200 2SC5200

2SC5200NBipolar Transistors Silicon NPN Triple-Diffused Type2SC5200N2SC5200N2SC5200N2SC5200N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 230 V (min)(2) Complementary to 2SA1943N(3) Recommended for 100-W high-fidelity audio frequency amplifier output

 0.2. Size:236K  toshiba
2sc5200r 2sc5200o.pdf

2SC5200 2SC5200

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collecto

 0.3. Size:213K  nell
2sc5200bl.pdf

2SC5200 2SC5200

RoHS 2SC5200BL Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor15A/230V/150W5.0020.000.2018.003.300.20TO-3PLFEATURESHigh breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL0.603.20TO-3PL package which can be installed to the 5.450.05 5.450.05heat sink with one screw1 2 3 APPLICATIONSSuit

 0.4. Size:1823K  cn sps
2sc5200t7tl.pdf

2SC5200 2SC5200

2SC5200T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER

 0.5. Size:196K  cn sptech
2sc5200r 2sc5200o.pdf

2SC5200 2SC5200

SPTECH Product SpecificationINCHANGE Semiconductor isc Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifie

 0.6. Size:212K  inchange semiconductor
2sc5200n.pdf

2SC5200 2SC5200

isc Silicon NPN Power Transistor 2SC5200NDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943NMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency am

 0.7. Size:216K  inchange semiconductor
2sc5200h.pdf

2SC5200 2SC5200

isc Silicon NPN Power Transistor 2SC5200HDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicati

Datasheet: ZXTP2029F , ZXTP2039F , ZXTP25060BFH , ZXTP25100BFH , ZXTP25100CFH , ZXTP25100CZ , ZXTP722MA , 2SA1943 , BC549 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D .

 

 
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