FJE3303 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJE3303
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.5 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO126
Búsqueda de reemplazo de FJE3303
- Selecciónⓘ de transistores por parámetros
FJE3303 datasheet
fje3303.pdf
FJE3303 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Bas
fje3303.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FJA4313 , FJB102 , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , BC547B , FJE5304D , FJI5603D , FJL4215 , FJL4315 , FJL6920 , FJN3303F , FJP13007 , FJP13009 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904