FJE3303 Specs and Replacement
Type Designator: FJE3303
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO126
FJE3303 Substitution
- BJT ⓘ Cross-Reference Search
FJE3303 datasheet
FJE3303 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Bas... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FJA4313 , FJB102 , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , BC547B , FJE5304D , FJI5603D , FJL4215 , FJL4315 , FJL6920 , FJN3303F , FJP13007 , FJP13009 .
History: SMA6010
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