FJE3303 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJE3303
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO126
FJE3303 Transistor Equivalent Substitute - Cross-Reference Search
FJE3303 Datasheet (PDF)
fje3303.pdf
FJE3303High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching RegulatorTO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Bas
fje3303.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
