FJI5603D Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJI5603D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1600 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 3 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO262
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FJI5603D datasheet
fji5603d.pdf
June 2008 FJI5603D NPN Silicon Transistor Applications Equivalent Circuit High Voltage and High Speed Power Switch Application C Electronic Ballast Application Features B Wide Safe Operating Area Small Variance in Storage Time I2-PAK 1 E Built-in Free Wheeling Diode 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symb
fji5603d.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , 2N2907 , FJL4215 , FJL4315 , FJL6920 , FJN3303F , FJP13007 , FJP13009 , FJP3305 , FJP3307D .
History: 2SD1109A
History: 2SD1109A
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