FJI5603D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJI5603D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1600 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 3 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO262
Búsqueda de reemplazo de transistor bipolar FJI5603D
FJI5603D Datasheet (PDF)
fji5603d.pdf
June 2008FJI5603DNPN Silicon TransistorApplicationsEquivalent Circuit High Voltage and High Speed Power Switch ApplicationC Electronic Ballast ApplicationFeaturesB Wide Safe Operating Area Small Variance in Storage Time I2-PAK1E Built-in Free Wheeling Diode1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymb
fji5603d.pdf
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Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC5826
History: 2SC5826
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050