All Transistors. FJI5603D Datasheet

 

FJI5603D Datasheet and Replacement


   Type Designator: FJI5603D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1600 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 3 A
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO262
 

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FJI5603D Datasheet (PDF)

 ..1. Size:206K  fairchild semi
 fji5603d.pdf pdf_icon

FJI5603D

June 2008FJI5603DNPN Silicon TransistorApplicationsEquivalent Circuit High Voltage and High Speed Power Switch ApplicationC Electronic Ballast ApplicationFeaturesB Wide Safe Operating Area Small Variance in Storage Time I2-PAK1E Built-in Free Wheeling Diode1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymb

 ..2. Size:277K  onsemi
 fji5603d.pdf pdf_icon

FJI5603D

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , 2SC2482 , FJL4215 , FJL4315 , FJL6920 , FJN3303F , FJP13007 , FJP13009 , FJP3305 , FJP3307D .

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