FJI5603D Datasheet. Specs and Replacement

Type Designator: FJI5603D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1600 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 3 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO262

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FJI5603D datasheet

 ..1. Size:206K  fairchild semi

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FJI5603D

June 2008 FJI5603D NPN Silicon Transistor Applications Equivalent Circuit High Voltage and High Speed Power Switch Application C Electronic Ballast Application Features B Wide Safe Operating Area Small Variance in Storage Time I2-PAK 1 E Built-in Free Wheeling Diode 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symb... See More ⇒

 ..2. Size:277K  onsemi

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FJI5603D

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FJB3307D, FJD3076, FJD3305H1, FJD5304D, FJD5553, FJD5555, FJE3303, FJE5304D, 2N2907, FJL4215, FJL4315, FJL6920, FJN3303F, FJP13007, FJP13009, FJP3305, FJP3307D

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