FJI5603D Datasheet, Equivalent, Cross Reference Search
Type Designator: FJI5603D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1600 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO262
FJI5603D Transistor Equivalent Substitute - Cross-Reference Search
FJI5603D Datasheet (PDF)
fji5603d.pdf
June 2008FJI5603DNPN Silicon TransistorApplicationsEquivalent Circuit High Voltage and High Speed Power Switch ApplicationC Electronic Ballast ApplicationFeaturesB Wide Safe Operating Area Small Variance in Storage Time I2-PAK1E Built-in Free Wheeling Diode1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymb
fji5603d.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
