FJP3305 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJP3305  📄📄 

Código: J3305-1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 65 pF

Ganancia de corriente contínua (hFE): 19

Encapsulados: TO220

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FJP3305 datasheet

 ..1. Size:283K  fairchild semi
 fjp3305.pdf pdf_icon

FJP3305

October 2008 FJP3305 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEB

 ..2. Size:374K  onsemi
 fjp3305.pdf pdf_icon

FJP3305

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:218K  inchange semiconductor
 fjp3305.pdf pdf_icon

FJP3305

isc Silicon NPN Power Transistor FJP3305 DESCRIPTION Large current capacitance High Power Dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications Suitable for Electronic Ballast and Switching Regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.1. Size:571K  fairchild semi
 fjp3307d.pdf pdf_icon

FJP3305

July 2008 FJP3307D High Voltage Fast Switching NPN Power Transistor Features Built-in Diode between Collector and Emitter Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B TO-220 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltag

MOSTRAR MÁS

Otros transistores... FJE5304D, FJI5603D, FJL4215, FJL4315, FJL6920, FJN3303F, FJP13007, FJP13009, D882P, FJP3307D, FJP5027N, FJP5304D, FJP5554, FJP5555, FJPF13007, FJPF13009, FJPF3305