FJP3307D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

July 2008FJP3307DHigh Voltage Fast Switching NPN Power TransistorFeatures Built-in Diode between Collector and Emitter Suitable for Electronic Ballast and Switch Mode Power SuppliesInternal Schematic DiagramCBTO-22011.Base 2.Collector 3.EmitterEAbsolute Maximum RatingsSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltag

October 2008FJP3305High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching RegulatorTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEB

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor FJP3305DESCRIPTIONLarge current capacitanceHigh Power DissipationLow saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSHigh speed switching applicationsSuitable for Electronic Ballast and Switching RegulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN