FJP3307D datasheet, аналоги, основные параметры

Наименование производителя: FJP3307D  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Электрические характеристики

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: TO220

  📄📄 Копировать 

 Аналоги (замена) для FJP3307D

- подборⓘ биполярного транзистора по параметрам

 

FJP3307D даташит

 ..1. Size:571K  fairchild semi
 fjp3307d.pdf pdf_icon

FJP3307D

July 2008 FJP3307D High Voltage Fast Switching NPN Power Transistor Features Built-in Diode between Collector and Emitter Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B TO-220 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltag

 8.1. Size:283K  fairchild semi
 fjp3305.pdf pdf_icon

FJP3307D

October 2008 FJP3305 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEB

 8.2. Size:374K  onsemi
 fjp3305.pdf pdf_icon

FJP3307D

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:218K  inchange semiconductor
 fjp3305.pdf pdf_icon

FJP3307D

isc Silicon NPN Power Transistor FJP3305 DESCRIPTION Large current capacitance High Power Dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications Suitable for Electronic Ballast and Switching Regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: FJI5603D, FJL4215, FJL4315, FJL6920, FJN3303F, FJP13007, FJP13009, FJP3305, BD136, FJP5027N, FJP5304D, FJP5554, FJP5555, FJPF13007, FJPF13009, FJPF3305, FJPF5021