KSC5603D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC5603D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1600 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 3 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO220
Búsqueda de reemplazo de KSC5603D
KSC5603D Datasheet (PDF)
ksc5603d.pdf

February 2010KSC5603D NPN Silicon Transistor, Planar Silicon TransistorFeaturesEquivalent CircuitC High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling DiodeB Suitable for Electronic Ballast ApplicationTO-2201 Small Variance in Storage Time 1.Base 2.Collector 3.EmitterEAbsolute Maximum Ratings TA = 25C
ksc5603d.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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