KSC5603D Datasheet, Equivalent, Cross Reference Search
Type Designator: KSC5603D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1600 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
KSC5603D Transistor Equivalent Substitute - Cross-Reference Search
KSC5603D Datasheet (PDF)
ksc5603d.pdf
February 2010KSC5603D NPN Silicon Transistor, Planar Silicon TransistorFeaturesEquivalent CircuitC High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling DiodeB Suitable for Electronic Ballast ApplicationTO-2201 Small Variance in Storage Time 1.Base 2.Collector 3.EmitterEAbsolute Maximum Ratings TA = 25C
ksc5603d.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
