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BFS17N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFS17N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 11 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3200 MHz
   Capacitancia de salida (Cc): 0.8 pF
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

BFS17N Datasheet (PDF)

 ..1. Size:145K  diodes
bfs17n.pdf pdf_icon

BFS17N

A Product Line ofDiodes IncorporatedBFS17NNPN RF TRANSISTOR IN SOT23 Features Mechanical Data 3.2GHz unity gain for RF switching applications Case: SOT23 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Case material: molded plastic. Green molding compound. Halogen and Antimony Free. Green Device (Note 3) UL Flammability Rating 94V-0

 9.1. Size:52K  motorola
bfs17lt1.pdf pdf_icon

BFS17N

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFS17LT1/DThe RF LineNPN SiliconBFS17LT1High-Frequency TransistorDesigned primarily for use in highgain, lownoise amplifier, oscillator andmixer applications. Packaged for thick or thin film circuits using surface mountcomponents. T1 suffix indicates tape and reel packaging of 3,000 units per reel.RF TRAN

 9.2. Size:170K  philips
bfs17w.pdf pdf_icon

BFS17N

DISCRETE SEMICONDUCTORS DATA SHEETBFS17WNPN 1 GHz wideband transistorProduct specification 1995 Sep 04Supersedes data of November 1992NXP Semiconductors Product specificationNPN 1 GHz wideband transistor BFS17WAPPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION3handbook, 2 columnsoscillator and IF amplifier in UHF and 1 baseVHF tuners.2 emitter

 9.3. Size:33K  philips
bfs17 2.pdf pdf_icon

BFS17N

DISCRETE SEMICONDUCTORSDATA SHEETBFS17NPN 1 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFS17DESCRIPTIONNPN transistor in a plastic SOT23 package.handbook, halfpage 3APPLICATIONS A wide range of RF applications such as: Mixers and osc

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

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