BFS17N datasheet и подбор замены

 ..1. Size:145K  diodes
 bfs17n.pdf 

A Product Line of Diodes Incorporated BFS17N NPN RF TRANSISTOR IN SOT23 Features Mechanical Data 3.2GHz unity gain for RF switching applications Case SOT23 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Case material molded plastic. Green molding compound. Halogen and Antimony Free. Green Device (Note 3) UL Flammability Rating 94V-0

 9.1. Size:52K  motorola
 bfs17lt1.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFS17LT1/D The RF Line NPN Silicon BFS17LT1 High-Frequency Transistor Designed primarily for use in high gain, low noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel. RF TRAN

 9.2. Size:170K  philips
 bfs17w.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION 3 handbook, 2 columns oscillator and IF amplifier in UHF and 1 base VHF tuners. 2 emitter

 9.3. Size:33K  philips
 bfs17 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS A wide range of RF applications such as Mixers and osc

 9.4. Size:44K  philips
 bfs17.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, 2 columns 21 APPLICATIONS A wide range of RF applications such as Mixers and

 9.5. Size:186K  philips
 bfs17a.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS It is intended for RF applications such as oscillators in TV tuners. 12 Top view MSB003 PINNING PIN

 9.6. Size:37K  philips
 bfs17a 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor September1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS It is intended for RF applications such as oscillators in

 9.7. Size:34K  philips
 bfs17w 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor 1995 Sep 04 Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING handbook, 2 columns 3 Primarily intended as a mixer, PIN DESCRIPTION oscillator and IF amplifier i

 9.8. Size:50K  philips
 bfs17a 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, 2 columns 21 APPLICATIONS It is intended for RF applications such as oscillators

 9.9. Size:34K  siemens
 bfs17w.pdf 

BFS 17W NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration Package BFS 17W MCs Q62702-F1645 1 = B 2 = E 3 = C SOT-323 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 C

 9.10. Size:55K  siemens
 bfs17s.pdf 

BFS 17S NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration Package BFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCB

 9.11. Size:48K  siemens
 bfs17p.pdf 

BFS 17P NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA CECC-type available CECC 50002/248. Type Marking Ordering Code Pin Configuration Package BFS 17P MCs Q62702-F940 1 = B 2 = E 3 = C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage V

 9.12. Size:47K  rohm
 bfs17.pdf 

BFS17 Transistors NPN small signal transistor BFS17 Features Dimensions (Unit mm) 1) Ideal for RF applications. BFS17 2) Mixers and oscillations in TV tuners. 3) RF communications equipment. 2.9 0.95 0.4 0.45 (3) Packaging specifications (2) (1) 0.95 0.95 Package Taping 0.15 1.9 Type Code T116 (1)Emitter Basic ordering unit (pieces) 3000 (2)Base Each lead ha

 9.13. Size:514K  infineon
 bfs17w.pdf 

BFS17W NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS17W MCs SOT323 1 = B 2 = E 3 = C Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symb

 9.14. Size:230K  infineon
 bfs17p.pdf 

BFS17P NPN Silicon RF Transistor Features Maximum collector-emitter voltage VCE0 = 15 V Maximum collector current IC = 25 mA Noise figure NF = 3.5 dB 3rd order output intercept point OIP3 = 21.5 dBm 1 dB output compression point P-1dB = 10 dBm Transition frequency fT = 1.4 GHz Maximum total power dissipation Ptot = 280 mW Package SOT23 Pb-free (R

 9.15. Size:869K  kexin
 bfs17.pdf 

SMD Type Transistors NPN Transistors BFS17 (KFS17) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=25mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 C

 9.16. Size:1043K  kexin
 bfs17a.pdf 

SMD Type Transistors NPN Transistors BFS17A (KFS17A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=25mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 2