BFS17N Datasheet. Specs and Replacement

Type Designator: BFS17N  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.33 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 11 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3200 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: SOT23

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BFS17N datasheet

 ..1. Size:145K  diodes

bfs17n.pdf pdf_icon

BFS17N

A Product Line of Diodes Incorporated BFS17N NPN RF TRANSISTOR IN SOT23 Features Mechanical Data 3.2GHz unity gain for RF switching applications Case SOT23 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Case material molded plastic. Green molding compound. Halogen and Antimony Free. Green Device (Note 3) UL Flammability Rating 94V-0 ... See More ⇒

 9.1. Size:52K  motorola

bfs17lt1.pdf pdf_icon

BFS17N

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFS17LT1/D The RF Line NPN Silicon BFS17LT1 High-Frequency Transistor Designed primarily for use in high gain, low noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel. RF TRAN... See More ⇒

 9.2. Size:170K  philips

bfs17w.pdf pdf_icon

BFS17N

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION 3 handbook, 2 columns oscillator and IF amplifier in UHF and 1 base VHF tuners. 2 emitter ... See More ⇒

 9.3. Size:33K  philips

bfs17 2.pdf pdf_icon

BFS17N

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS A wide range of RF applications such as Mixers and osc... See More ⇒

Detailed specifications: KSC5603D, KSE13003T, KSE44H, KSE45H, MJD41CTF, MJD47TF, MJD50TF, NZT902, BD140, DMMT3904W, DMMT3906, DMMT3906W, DMMT5401, DMMT5551, DMMT5551S, FCX605, FCX705

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