BDW47 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW47
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hFE): 1000
Encapsulados: TO220
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BDW47 datasheet
bdw42 bdw46 bdw47.pdf
Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc *Motorola Preferred Device VCEO(sus) = 80 Vdc (
bdw47.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW42 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT 100 VCEO Collector-Emitter Voltage V 100 VCBO Collector-Base Voltage V 5.0 VEBO Emitt
bdw47.pdf
isc Silicon PNP Darlington Power Transistor BDW47 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = -5A FE C Low Collector Saturation Voltage V = -2.0V(Max.)@ I = -5.0A CE(sat) C = -3.0V(Max.)@ I = -10A C Complement to Type BDW42 Minimum Lot-to-Lot variations for robust device performance and reliable
bdw47g.pdf
BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http //onsemi.com switching applications. Features 15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON Collector Emitter
Otros transistores... BCW32L, BCW33L, BCW65AL, BCW68GL, BCW70L, BCW72L, BCX17L, BCX19L, 2SC2655, BSP19A, BSS64L, BSV52L, BUB323Z, BUD42D, BUL45, BUL45D2, CPH3105
History: 2SD772A
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