BDW47 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW47
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de BDW47
BDW47 Datasheet (PDF)
bdw42 bdw46 bdw47.pdf

Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (
bdw47.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47TO-220Plastic PackageGeneral Purpose and Low Speed Switching ApplicationComplementary BDW42ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT100VCEOCollector-Emitter Voltage V100VCBOCollector-Base Voltage V5.0VEBOEmitt
bdw47.pdf

isc Silicon PNP Darlington Power Transistor BDW47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = -5AFE CLow Collector Saturation Voltage: V = -2.0V(Max.)@ I = -5.0ACE(sat) C= -3.0V(Max.)@ I = -10ACComplement to Type BDW42Minimum Lot-to-Lot variations for robust deviceperformance and reliable
bdw47g.pdf

BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter
Otros transistores... BCW32L , BCW33L , BCW65AL , BCW68GL , BCW70L , BCW72L , BCX17L , BCX19L , 8550 , BSP19A , BSS64L , BSV52L , BUB323Z , BUD42D , BUL45 , BUL45D2 , CPH3105 .
History: 3CG1203 | GT322D



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