BDW47
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW47
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 300
pF
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BDW47
BDW47
Datasheet (PDF)
..1. Size:176K motorola
bdw42 bdw46 bdw47.pdf 
Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (
..2. Size:235K cdil
bdw47.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47TO-220Plastic PackageGeneral Purpose and Low Speed Switching ApplicationComplementary BDW42ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT100VCEOCollector-Emitter Voltage V100VCBOCollector-Base Voltage V5.0VEBOEmitt
..3. Size:215K inchange semiconductor
bdw47.pdf
isc Silicon PNP Darlington Power Transistor BDW47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = -5AFE CLow Collector Saturation Voltage: V = -2.0V(Max.)@ I = -5.0ACE(sat) C= -3.0V(Max.)@ I = -10ACComplement to Type BDW42Minimum Lot-to-Lot variations for robust deviceperformance and reliable
0.1. Size:147K onsemi
bdw47g.pdf
BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter
0.2. Size:481K semtech
stbdw47.pdf
ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage -VCEO 100 VCollector Base Voltage -VCBO 100 V Emitter Base Voltage -VEBO 5 VCollector Current Continuous -IC 15 A Base Currentt -IB 0.5 AOTotal P
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