BDW47 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDW47 Specs and Replacement

Type Designator: BDW47

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220

BDW47 Substitution

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BDW47 datasheet

..1. Size:176K motorola

bdw42 bdw46 bdw47.pdf pdf_icon

Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc *Motorola Preferred Device VCEO(sus) = 80 Vdc (... See More ⇒

..2. Size:235K cdil

bdw47.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW42 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT 100 VCEO Collector-Emitter Voltage V 100 VCBO Collector-Base Voltage V 5.0 VEBO Emitt... See More ⇒

..3. Size:215K inchange semiconductor

bdw47.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BDW47 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = -5A FE C Low Collector Saturation Voltage V = -2.0V(Max.)@ I = -5.0A CE(sat) C = -3.0V(Max.)@ I = -10A C Complement to Type BDW42 Minimum Lot-to-Lot variations for robust device performance and reliable... See More ⇒

0.1. Size:147K onsemi

bdw47g.pdf pdf_icon

BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http //onsemi.com switching applications. Features 15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON Collector Emitter... See More ⇒