BDW47 - описание и поиск аналогов

Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc *Motorola Preferred Device VCEO(sus) = 80 Vdc (

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW42 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT 100 VCEO Collector-Emitter Voltage V 100 VCBO Collector-Base Voltage V 5.0 VEBO Emitt

isc Silicon PNP Darlington Power Transistor BDW47 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = -5A FE C Low Collector Saturation Voltage V = -2.0V(Max.)@ I = -5.0A CE(sat) C = -3.0V(Max.)@ I = -10A C Complement to Type BDW42 Minimum Lot-to-Lot variations for robust device performance and reliable

BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http //onsemi.com switching applications. Features 15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON Collector Emitter

ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 15 A Base Currentt -IB 0.5 A O Total P