BUL45
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL45
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-emisor (Vce): 400
V
Corriente del colector DC máxima (Ic): 5
A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 14
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BUL45
BUL45
Datasheet (PDF)
..1. Size:119K inchange semiconductor
bul45.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL45 DESCRIPTION With TO-220C package Fast switching speed High voltage APPLICATIONS Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL
0.1. Size:392K motorola
bul45rev.pdf
Order this documentMOTOROLAby BUL45/DSEMICONDUCTOR TECHNICAL DATABUL45 *Designer's Data SheetBUL45F*NPN Silicon Power Transistor*Motorola Preferred DeviceHigh Voltage SWITCHMODEt SeriesPOWER TRANSISTOR5.0 AMPERESDesigned for use in electronic ballast (light ballast) and in Switchmode Power700 VOLTSsupplies up to 50 Watts. Main features include:35 and 75 WATTS
0.2. Size:444K motorola
bul45d2r.pdf
Order this documentMOTOROLAby BUL45D2/DSEMICONDUCTOR TECHNICAL DATABUL45D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar700 VOLTSNPN Power Transistor with75 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe BUL45D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).High dynamic
0.3. Size:205K onsemi
bul45g.pdf
BUL45GNPN Silicon PowerTransistorHigh Voltage SWITCHMODEt SeriesDesigned for use in electronic ballast (light ballast) and inhttp://onsemi.comSwitchmode Power supplies up to 50 Watts.Features POWER TRANSISTOR5.0 AMPERES, 700 VOLTS, Improved Efficiency Due to:35 AND 75 WATTS Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On-Stat
0.4. Size:361K onsemi
bul45d2g.pdf
BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodewww.onsemi.comand Built-in Efficient AntisaturationNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lot700 VOLTS, 75 WATTSminimum spread (150 ns on storage time) make it i
0.5. Size:231K onsemi
bul45d2-d.pdf
BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturationhttp://onsemi.comNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lotminimum spread (150 ns on storage time) make it ideally suitable fo
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